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| Semiconductor SUD494N Silicon epitaxial planar Diode Features * Ultra high speed * Fast reverse recovery time : trr=1.6ns(Typ.) * Small total capacitance : CT =2.2pF(Typ.) * Three SDS914 chips in SOT-26 package Ordering Information Type NO. SUD494N Marking EX Package Code SOT-26 Outline Dimensions unit : mm 2.800.2 0.950.02 1.600.1 4 5 6 6 5 4 0.4 Typ. 1 2 3 1.90.02 2.90.1 3 2 1 1.10 0.1 0.4 Min. 0.150.04 0~0.1 PIN Connections 1. Cathode 2. Cathode 3. Cathode 4. Anode 5. Anode 6. Anode KSD-A002-001 1 SUD494N Absolute maximum ratings Characteristic Maximum(peak) reverse voltage Reverse voltage Maximum(peak) forward current Average forward current Surge current(10ms) Power dissipation Junction temperature Storage temperature Ta=25C Symbol VRM VR IFM IO IFSM PD Tj Tstg Ratings 85 80 300 100 2 150 150 -55 ~ 150 Unit V V mA mA A mW C C Electrical Characteristics Characteristic Forward voltage Reverse current Total capacitance Reverse recovery time Ta=25 C Symbol VF(1) VF(2) VF(3) IR CT IF=1mA Test Condition IF=10mA IF=100mA VR=80V VR=0, f=1MHz IF=10mA Min. - Typ. 0.6 0.7 0.9 2.2 1.6 Max. 1.2 0.5 4.0 4.0 Unit V A pF trr ns KSD-A002-001 2 SUD494N Electrical Characteristic Curves Fig. 1 IF-VF Fig. 2 IR-VR Fig. 3 C T-VR Fig. 4 trr-IF Fig. 5 Reverse recovery time(trr) test circuit KSD-A002-001 3 |
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